This PDF includes GI #2. 1. Scope 1.1 This Standard applies to the following products intended for use in accordance with the Rules of the Canadian Electrical Code, Part I: (a) metal and nonmetallic cutout boxes; (b) metal and nonmetallic junctio

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5.1 Many electronic instruments that are designed to be used with thermocouples use some method of reference junction compensation. In many industrial applications it may be impractical to use a physical ice bath as a temperature reference in a thermocouple circuit. The instrument must therefore be able to measure the temperature at the point of electrical connection of the thermocouple and either add or subtract voltage to give a corrected equivalent of what that thermocouple would indicate had there physically been 0 °C reference junctions present in the circuit. There are two types of instruments that generally apply these techniques: electronic thermometer readouts that use a thermocouple as the sensor, and calibrators designed to calibrate these digital thermometer readouts. Additionally, the probe and circuit described in this guide can be used with a voltmeter to emulate a thermometer or a voltage source to calibrate temperature-indicating instrumentation. In all cases the probe must be calibrated if traceability or an uncertainty analysis, or both, is required.1.1 This guide covers methods of calibration and use of thermocouple reference junction probes (cold junction compensation probes) in the evaluation of electronic reference junction compensation circuits. Their use with instruments that measure only voltage is also covered.1.2 The values stated in SI units are to be regarded as standard. The values given in parentheses after SI units are provided for information only and are not considered standard.1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.1.4 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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5.1 This index test method is to be used to determine the strength of an individual junction in a geogrid product. The test is performed in isolation, while in service the junction is typically confined. Thus the results from this test method are not anticipated to be related to design performance.5.2 The value of junction strength can be used for manufacturing quality control, development of new products, or a general understanding of the in-isolation behavior of a particular geogrid’s junction (for example, in relation to handling during shipment and placement of the geogrid).5.3 This test method is applicable to geogrid products with essentially symmetrical orthogonal or non-orthogonal ribs, yarns, or straps, that is, geogrids which are composed of ribs, yarns, or straps that are entangled through weaving or knitting, welded, bonded, or formed through drawing.1.1 This test method is an index test which provides a procedure for determining the strength of an individual geogrid junction, also called a node. The test is configured such that a single rib is pulled from its junction with a rib(s) transverse to the test direction to obtain the maximum force, or strength of the junction. The procedure allows for the use of two different clamps with the appropriate clamp selected to minimize the influence of the clamping mechanism on the specific type of geogrid to be tested.1.2 The values stated in either SI units or inch-pound units are to be regarded separately as standard. The values stated in each system are not necessarily exact equivalents; therefore, to ensure conformance with the standard, each system shall be used independently of the other, and values from the two systems shall not be combined.1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.1.4 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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The current gain of a transistor is basic to its operation and is its single most important parameter. Ionizing radiation, that is, gamma radiation due to a nuclear burst, will degrade the current gain due to lifetime damage in the bulk material. Degradation of gain will be greatest immediately following a burst of ionizing radiation and the gain will rapidly recover to a quasi steady-state value. Defect annealing may continue for weeks but usually the current gain recovery is small or negligible. This method provides a procedure that does not require special-purpose test equipment. This method is suitable for use for specification acceptance, service evaluation, or manufacturing control.1.1 This test method covers the measurement of common-emitter d-c current gain (forward, hFE, or inverted, hFEI) of bipolar transistors, for which the collector-emitter leakage current, ICEO, is less than 10% of the collector current, IC, at which the measurement is to be made, and for which the shunt leakage current in the base circuit is less than 10% of the base current required. 1.2 This test method is suitable for measurement of common-emitter d-c current gain at a single given value of test transistor collector current or over a given range of collector currents (for example, over the range of the transistor to be tested). 1.2.1 The nominal ranges of collector current over which the three test circuits are intended to be used are as follows: 1.2.1.1 Circuit 1, less than 100 [mu]A, 1.2.1.2 Circuit 2, from 100 [mu]A to 100 mA, and 1.2.1.3 Circuit 3, greater than 100 mA. 1.3 This test method incorporates tests to determine if the power dissipated in the transistor is low enough that the temperature of the junction is approximately the same as the ambient temperature. 1.4 The values stated in International System of Units (SI) are to be regarded as standard. No other units of measurement are included in this standard. 1.5 This standard does not purport to address the safety problems, if any, associated with its use. It is the responsibility of whoever uses this standard to consult and establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

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