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3.1 Because of the wide variety of materials being used in neutron-activation measurements, this guide is presented with the objective of bringing improved uniformity to the specific field of interest here: hardness testing of electronics primarily in critical assembly reactor environments.NOTE 2: Some of the techniques discussed are useful for 14-MeV dosimetry. See Test Method E496 for activation detector materials suitable for 14-MeV neutron effects testing.NOTE 3: The materials recommended in this guide are suitable for 252Cf or other weak source effects testing provided the fluence is sufficient to generate countable activities.3.2 This guide is organized into two overlapping subjects: the criteria used for sensor selection, and the procedures used to ensure the proper determination of activities for determination of neutron spectra. See Terminology E170 and Test Methods E181. Determination of neutron spectra with activation sensor data is discussed in Guides E721 and E944.1.1 This guide covers the selection and use of neutron-activation detector materials to be employed in neutron spectra adjustment techniques used for radiation-hardness testing of electronic semiconductor devices. Sensors are described that have been used at many radiation hardness-testing facilities, and comments are offered in table footnotes concerning the appropriateness of each reaction as judged by its cross-section accuracy, ease of use as a sensor, and by past successful application. This guide also discusses the fluence-uniformity, neutron self-shielding, and fluence-depression corrections that need to be considered in choosing the sensor thickness, the sensor covers, and the sensor locations. These considerations are relevant for the determination of neutron spectra from assemblies such as TRIGA- and Godiva-type reactors and from Californium irradiators. This guide may also be applicable to other broad energy distribution sources up to 20 MeV.NOTE 1: For definitions on terminology used in this guide, see Terminology E170.1.2 This guide also covers the measurement of the gamma-ray or beta-ray emission rates from the activation foils and other sensors as well as the calculation of the absolute specific activities of these foils. The principal measurement technique is high-resolution gamma-ray spectrometry. The activities are used in the determination of the energy-fluence spectrum of the neutron source. See Guide E721.1.3 Details of measurement and analysis are covered as follows:1.3.1 Corrections involved in measuring the sensor activities include those for finite sensor size and thickness in the calibration of the gamma-ray detector, for pulse-height analyzer deadtime and pulse-pileup losses, and for background radioactivity.1.3.2 The primary method for detector calibration that uses secondary standard gamma-ray emitting sources is considered in this guide and in Test Methods E181. In addition, an alternative method in which the sensors are activated in the known spectrum of a benchmark neutron field is discussed in Guide E1018.1.3.3 A data analysis method is presented which accounts for the following: detector efficiency; background subtraction; irradiation, waiting, and counting times; fission yields and gamma-ray branching ratios; and self-absorption of gamma rays and neutrons in the sensors.1.4 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.1.6 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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4.1 It is important to know the energy spectrum of the particular neutron source employed in radiation-hardness testing of electronic devices in order to relate radiation effects with device performance degradation.4.2 This guide describes the factors which must be considered when the spectrum adjustment methodology is chosen and implemented. Although the selection of sensors (foils) and the determination of responses (activities) is discussed in Guide E720, the experiment should not be divorced from the analysis. In fact, it is advantageous for the analyst conducting the spectrum determination to be closely involved with the design of the experiment to ensure that the data obtained will provide the most accurate spectrum possible. These data include the following: (1) measured responses such as the activities of foils exposed in the environment and their uncertainties, (2) response functions such as reaction cross sections along with appropriate correlations and uncertainties, (3) the geometry and materials in the test environment, and (4) a trial function or prior spectrum and its uncertainties obtained from a transport calculation or from previous experience.1.1 This guide covers procedures for determining the energy-differential fluence spectra of neutrons used in radiation-hardness testing of electronic semiconductor devices. The types of neutron sources specifically covered by this guide are fission or degraded energy fission sources used in either a steady-state or pulse mode.1.2 This guide provides guidance and criteria that can be applied during the process of choosing the spectrum adjustment methodology that is best suited to the available data and relevant for the environment being investigated.1.3 This guide is to be used in conjunction with Guide E720 to characterize neutron spectra and is used in conjunction with Practice E722 to characterize damage-related parameters normally associated with radiation-hardness testing of electronic semiconductor devices.NOTE 1: Although Guide E720 only discusses activation foil sensors, any energy-dependent neutron-responding sensor for which a response function is known may be used (1).2NOTE 2: For terminology used in this guide, see Terminology E170.1.4 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.1.6 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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5.1 This practice is important in characterizing the radiation hardness of electronic devices irradiated by neutrons. This characterization makes it feasible to predict some changes in operational properties of irradiated semiconductor devices or electronic systems. To facilitate uniformity of the interpretation and evaluation of results of irradiations by sources of different fluence spectra, it is convenient to reduce the incident neutron fluence from a source to a single parameter—an equivalent monoenergetic neutron fluence—applicable to a particular semiconductor material.5.2 In order to determine an equivalent monoenergetic neutron fluence, it is necessary to evaluate the displacement damage of the particular semiconductor material. Ideally, this quantity is correlated to the degradation of a specific functional performance parameter (such as current gain) of the semiconductor device or system being tested. However, this correlation has not been established unequivocally for all device types and performance parameters since, in many instances, other effects also can be important. Ionization effects produced by the incident neutron fluence or by gamma rays in a mixed neutron fluence, short-term and long-term annealing, and other factors can contribute to observed performance degradation (damage). Thus, caution should be exercised in making a correlation between calculated displacement damage and performance degradation of a given electronic device. The types of devices for which this correlation is applicable, and numerical evaluation of displacement damage are discussed in the annexes.5.3 The concept of 1-MeV equivalent fluence is widely used in the radiation-hardness testing community. It has merits and disadvantages that have been debated widely (9-12). For these reasons, specifics of a standard application of the 1-MeV equivalent fluence are presented in the annexes.1.1 This practice covers procedures for characterizing neutron fluence from a source in terms of an equivalent monoenergetic neutron fluence. It is applicable to neutron effects testing, to the development of test specifications, and to the characterization of neutron test environments. The sources may have a broad neutron-energy range, or may be mono-energetic neutron sources with energies up to 20 MeV. This practice is not applicable in cases where the predominant source of displacement damage is from neutrons of energy less than 10 keV. The relevant equivalence is in terms of a specified effect on certain physical properties of materials upon which the source spectrum is incident. In order to achieve this, knowledge of the effects of neutrons as a function of energy on the specific property of the material of interest is required. Sharp variations in the effects with neutron energy may limit the usefulness of this practice in the case of mono-energetic sources.1.2 This practice is presented in a manner to be of general application to a variety of materials and sources. Correlation between displacements (1-3)2 caused by different particles (electrons, neutrons, protons, and heavy ions) is out of the scope of this practice but is addressed in Practice E3084. In radiation-hardness testing of electronic semiconductor devices, specific materials of interest include silicon and gallium arsenide, and the neutron sources generally are test and research reactors and californium-252 irradiators.1.3 The technique involved relies on the following factors: (1) a detailed determination of the fluence spectrum of the neutron source, and (2) a knowledge of the degradation (damage) effects of neutrons as a function of energy on specific material properties.1.4 The detailed determination of the neutron fluence spectrum referred to in 1.3 need not be performed afresh for each test exposure, provided the exposure conditions are repeatable. When the spectrum determination is not repeated, a neutron fluence monitor shall be used for each test exposure.1.5 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard, except for MeV, keV, eV, MeV·mbarn, rad(Si)·cm2, and rad(GaAs)·cm2.1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.1.7 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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4.1 The guide is intended to be used to assess competencies of qualified individuals who wish to become certified as an aircraft electronics installation technician through a program such as the National Center for Aerospace and Transportation Technologies (NCATT).4.2 The guide is intended to be used in concert with a certification provider’s structure and materials for management, exam delivery, and candidate preparation.1.1 The purpose of this guide is to address the fundamental subject knowledge activities and functions for avionics professionals to be titled Aircraft Electronics Installation Technicians (AEIT).1.2 This guide is the basis for the Aircraft Electronics Installation Technician (AEIT) certification, an endorsement to the Aircraft Electronics Technician (AET) certification. Candidates must be a certified AET to take the certification exam associated with this guide.1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.1.4 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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4.1 The guide is intended to be used to assess competencies of qualified individuals who wish to become certified as an Aircraft Electronics Technician through a certification program.4.2 The guide is intended to be used in concert with a certification provider’s structure and materials for management, exam delivery, and candidate preparation.1.1 The purpose of this guide is to address the basic fundamental subject knowledge, task performance, and task knowledge activities and functions for avionics professionals to be titled Aircraft Electronics Technicians (AETs).1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.1.3 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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4.1 This guide recommends the water quality required for the electronics and microelectronics industries. High-purity water is required to prevent contamination of products during manufacture, since contamination can lead to an unacceptable, low yield of electronic devices.4.2 The range of water purity is defined in accordance with the manufacturing process. The types of ultra-pure water are defined with respect to device line width. In all cases, the water-quality recommendations apply at the point of distribution.4.3 The limits on the impurities are related to current contamination specifications and to available analytical methods (either performed in a suitable clean laboratory or by on-line instrumentation). On-line and off-line methods are used in accordance with current industry practice. Concentration of the sample may be required to measure the impurities at the levels indicated in Table 1.(A) The user should be advised that analytical data often are instrument dependent and technique dependent. Thus, the numbers in Table 1 are only guidelines. This table will be revised whenever the semiconductor industry develops new linewidths, thereby keeping the guidelines current.(B) Values shown in Type E-1.3 are a result of aligning ITRS risk factors of known contaminates to the production processes found in current semiconductor processing for the linewidth of interest and may differ in a few cases to those found in Type E-1.2. Users who wish to use the higher numbers for Type E-1.2 water should feel free to do so.All values are equal to or less than with the exception of Resistivity.(C) Boron is monitored only as an operational parameter for monitoring the ion-exchange beds.1.1 This guide provides recommendations for water quality related to electronics and semiconductor-industry manufacturing. Seven classifications of water are described, including water for line widths as low as 0.032 μm. In all cases, the recommendations are for water at the point of distribution (POD).1.2 Water is used for washing and rinsing of semiconductor components during manufacture. Water is also used for cleaning and etching operations, making steam for oxidation of silicon surfaces, preparing photomasks, and depositing luminescent materials. Other applications are in the development and fabrication of solid-state devices, thin-film devices, communication lasers, light-emitting diodes, photo-detectors, printed circuits, memory devices, vacuum-tube devices, or electrolytic devices.1.3 Users needing water qualities different from those described here should consult other water standards, such as Specification D1193 and Guide D5196.1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.1.5 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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