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5.1 Brown and Lu4,5 show the Charpy impact energy is related to the ultimate critical temperature of the rapid crack propagation [RCP] behavior as measured by the ISO 13477, S-4 test.65.2 The test method may be used to determine the impact energy of polyethylene used in the manufacture of pipe . This test method involves the preparation of a small compression molded specimen of PE resin that is then notched in a specified manner. The specimen is then broken in a pendulum impact machine. The impact energy is recorded in joules. The value obtained is referred to as the Charpy impact energy.1.1 This test method describes the specimen preparation and the method of measuring the impact energy of polyethylene used in pressurized pipes.1.2 The test specimens are taken from compression molded plaques of the resin from pellets or pipe.1.3 Units—The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.1.5 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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4.1 This test method indicates approximate change in properties of asphalt during conventional hot-mixing at about 302 °F (150 °C) as indicated by viscosity and other rheological measurements. It yields a residue which approximates the asphalt condition as incorporated in the pavement. If the mixing temperature differs appreciably from the 302 °F (150 °C) level, more or less effect on properties will occur. This test method can also be used to determine mass change, which is a measure of asphalt volatility.NOTE 1: The quality of results produced by this standard is dependent on the competence of the personnel performing the procedure and the capability, calibration, and maintenance of the equipment used. Agencies that meet the criteria of Specification D3666 are generally considered capable of competent and objective testing, sampling, inspection, etc. Users of this standard are cautioned that compliance with Specification D3666 alone does not completely ensure reliable results. Reliable results depend on many factors; following the suggestions of Specification D3666 or some similar acceptable guidance provides a means of evaluating and controlling some of those factors.1.1 This test method is intended to measure the effect of heat and air on a moving film of semi-solid asphaltic materials. The effects of this treatment are determined from measurements of the selected properties of the asphalt before and after the test.1.2 The values stated in inch-pound units are to be regarded as the standard.1.3 The text of this standard references notes and footnotes which provide explanatory material. These notes and footnotes (excluding those in tables and figures) shall not be considered as requirements of the standard.1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.1.5 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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This specification covers sputtering targets fabricated from chromium metal for use in thin film applications. The grades of chromium covered in this specification, are based on the total metallic impurity content of the metallic elements, and are classified as 4N, 3N7, 3N5, 3N, and 2N8. Materials shall be tested using analytical methods such as combustion/infrared spectrometry, thermal conductivity, atomic absorption spectrometry, direct current plasma, inductively coupled plasma, and spark source mass spectroscopy or glow discharge mass spectroscopy; and the individual grades shall conform to specified values of chemical composition, density, grain size.1.1 This specification covers sputtering targets fabricated from chromium metal.1.2 This specification sets purity grade levels, physical attributes, analytical methods and packaging requirements.1.3 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.

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5.1 As a result of the manufacturing process, internal stresses are locked into the film and these can be released by heating.NOTE 3: For any given type of film or sheeting, the temperatures at which shrinkage will begin are related to processing techniques employed to manufacture the film and also may be related to a phase transition in the base resin.5.2 Shrink tension affects the appearance and performance of a film in a shrink-packaging application. It is also used to determine the degree and direction of orientation. The orientation exerts a great influence upon important physical characteristics such as tensile strength, stiffness, tear resistance, and impact strength.5.3 Data from Procedure A are most useful for determining the degree and direction of orientation, orientation release stress, and the maximum force that the film can exert at a given temperature.5.4 Since, in actual applications, film is seldom, if ever, totally restrained, data from Procedure B are useful in estimating the force an item to be packaged will actually receive and in predicting the appearance of packaged items.5.5 The characterization of shrink tension as a function of temperature, and the resultant determination of orientation release stress and its corresponding temperature, is usually carried out only for a particular material of specified thickness for a defined fabrication process. For product development purposes, quality control and determination of conformity be made to the specification of the material being tested. Any test specimen preparation, conditioning, dimensions, or testing parameters, or combination thereof, covered in the relevant ASTM material specification shall take precedence over those mentioned in this test method. If there are no relevant ASTM material specifications, then the default conditions apply. Table 1 of Classification Systems D4000 lists the ASTM material specifications that currently exist.1.1 This test method covers the determination of the shrink tension and related characteristics, that is, shrink force and orientation release stress, of heat-shrinkable plastic film and sheeting of less than 1.0 mm (0.04 in.) thickness. Two procedures are described that permit the measurement of shrink forces at predetermined temperatures. They are as follows:1.1.1 Procedure A is designed to measure the maximum force exerted by a specimen that is totally restrained from shrinking as it is heated rapidly to a specific temperature.1.1.2 Procedure B is designed to measure the maximum force exerted by a specimen that is permitted to shrink a predetermined amount prior to restraint while being heated rapidly to a specific temperature.1.2 Orientation release stress can be determined from the data obtained using Procedure A.1.3 The values stated in SI units are to be regarded as the standard. The values in parentheses are for information only.1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.NOTE 1: Film has been arbitrarily defined as sheeting having nominal thickness not greater than 0.25 µm (0.010 in.).NOTE 2: There is no known ISO equivalent to this test method.1.5 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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5.1 In-plane length measurements can be used in calculations of parameters, such as residual strain and Young's modulus.5.2 In-plane deflection measurements are required for specific test structures. Parameters, including residual strain, are calculated given the in-plane deflection measurements.1.1 This test method covers a procedure for measuring in-plane lengths (including deflections) of patterned thin films. It applies only to films, such as found in microelectromechanical systems (MEMS) materials, which can be imaged using an optical interferometer, also called an interferometric microscope.1.2 There are other ways to determine in-plane lengths. Using the design dimensions typically provides more precise in-plane length values than using measurements taken with an optical interferometric microscope. (Interferometric measurements are typically more precise than measurements taken with an optical microscope.) This test method is intended for use when interferometric measurements are preferred over using the design dimensions (for example, when measuring in-plane deflections and when measuring lengths in an unproven fabrication process).1.3 This test method uses a non-contact optical interferometric microscope with the capability of obtaining topographical 3-D data sets. It is performed in the laboratory.1.4 The maximum in-plane length measured is determined by the maximum field of view of the interferometric microscope at the lowest magnification. The minimum deflection measured is determined by the interferometric microscope’s pixel-to-pixel spacing at the highest magnification.1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.1.6 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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5.1 Residual strain measurements are an aid in the design and fabrication of MEMS devices. The value for residual strain can be used in Young's modulus calculations.1.1 This test method covers a procedure for measuring the compressive residual strain in thin films. It applies only to films, such as found in microelectromechanical systems (MEMS) materials, which can be imaged using an optical interferometer, also called an interferometric microscope. Measurements from fixed-fixed beams that are touching the underlying layer are not accepted.1.2 This test method uses a non-contact optical interferometric microscope with the capability of obtaining topographical 3-D data sets. It is performed in the laboratory.1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.1.4 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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5.1 Strain gradient values are an aid in the design and fabrication of MEMS devices.1.1 This test method covers a procedure for measuring the strain gradient in thin, reflecting films. It applies only to films, such as found in microelectromechanical systems (MEMS) materials, which can be imaged using an optical interferometer, also called an interferometric microscope. Measurements from cantilevers that are touching the underlying layer are not accepted.1.2 This test method uses a non-contact optical interferometric microscope with the capability of obtaining topographical 3-D data sets. It is performed in the laboratory.1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.1.4 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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5.1 Factors that may influence the thermal-transmission properties of a specimen of material are described in Practice C1045 and the Precision and Bias section of Test Method C177.5.2 Because of the required test conditions prescribed by this test method, it shall be recognized that the thermal properties obtained will not necessarily apply without modification to all conditions of service. As an example, this test method normally provides that the thermal properties shall be obtained on specimens that do not contain moisture, although in service such conditions may not be realized. Even more basic is the dependence of the thermal properties on variables such as mean temperature and temperature difference.5.3 When a new or modified design of apparatus is evolved, tests shall be made on at least two sets of differing material of known long-term thermal stability. Tests shall be made for each material at a minimum of two different mean temperatures within the operating range of each. Any differences in results should be carefully studied to determine the cause and then be removed by appropriate action. Only after a successful verification study on materials having known thermal properties traceable to a recognized national standards laboratory shall test results obtained with this apparatus be considered to conform with this test method. Periodic checks of apparatus performance are recommended.5.4 The thermal transmission properties of many materials depend upon the prior thermal history. Care must be exercised when testing such specimens at a number of conditions so that tests are performed in a sequence that limits such effects on the results.5.5 Typical uses for the thin-heater apparatus include the following:5.5.1 Product development and quality control applications.5.5.2 Measurement of thermal conductivity at desired mean temperatures.5.5.3 Thermal properties of specimens that are moist or close to melting point or other critical temperature (see Note 1).NOTE 1: Apparatus of the type covered by this test method apply to the study of thermal properties of specimens containing moisture because of the use of small temperature differences and the low thermal capacity of the heat source.5.5.4 Determination of thermal properties of relatively high R value insulation samples with large apparatuses. In the case of the metal-screen heater apparatus, samples with thicknesses up to 15 cm can be measured.1.1 This test method covers the determination of the steady-state thermal transmission properties of flat-slab specimens of thermal insulation using a thin heater of uniform power density having low lateral heat flow. A thin heater with low lateral thermal conductance can reduce unwanted lateral heat flow and avoid the need for active-edge guarding.1.2 This primary test method of thermal-transmission measurement describes a principle, rather than a particular apparatus. The principle involves determination of the thermal flux across a specimen of known thickness and the temperatures of the hot and cold faces of the specimen.1.3 Considerable latitude is given to the designer of the apparatus in this test method; since a variety of designs is possible, a procedure for qualifying an apparatus is given in 5.3.1.4 The specimens must meet the following conditions if thermal resistance or thermal conductance of the specimen is to be determined by this test method2:1.4.1 The portion of the specimen over the isothermal area of the heater must accurately represent the whole specimen.1.4.2 The remainder of the specimen should not distort the heat flow in that part of the specimen defined in 1.4.1.1.4.3 The specimen shall be thermally homogeneous such that the thermal conductivity is not a function of the position within the sample, but rather may be a function of direction, time, and temperature. The specimen shall be free of holes, of high-density volumes, and of thermal bridges between the test surfaces or the specimen edges.1.4.4 Test Method C177 describes tests that can help ascertain whether conditions of 1.4 are satisfied. For the purposes of this test method, differences in the measurements of less than 2 % may be considered insignificant, and the requirements fulfilled.1.5 The specimens shall meet one of the following requirements, in addition to those of 1.4.1.5.1 If homogeneous materials as defined in Terminology C168 are tested, then the thermal resistivity and thermal conductivity can be determined by this test method.1.5.2 If materials which are layered or otherwise thermally inhomogeneous are tested, thermal resistance and thermal conductance can be determined by this test method.1.6 Two versions of thin-heater apparatus using the same principle of the standard are described in Annex A1 and Annex A2. They are similar in concept but differ in size and construction, and hence warrant separate descriptions for each design. This test method in no way limits the size of the thin-heater element. One of the units described uses a thin metal foil, while the other uses a metal screen as the heat source. The smaller, foil apparatus is designed to make rapid measurements of heat transmission through specimens as thin as 0.5 cm and as thick as 2 cm; however, an apparatus using a foil heater could be designed to measure much thicker materials, if desired. The larger, screen apparatus is designed to measure specimens with thicknesses between 3 and 15 cm, where the exact limits depend on the thermal resistance of the specimens. Both apparatuses use thermocouples for measuring temperature, but other temperature-sensing systems can be used.1.7 This test method covers the theory and principles of the measurement technique. It does not provide details of construction other than those required to illustrate two devices which meet the prescribed requirements. Detailed information is available in References (1-23)3 and the Adjunct.1.8 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.1.9 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.1.10 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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The rate of evaporation of volatile liquids from a solution or dispersion is important because it affects the rate of deposition of a film and flow during deposition, and thereby controls the structure and appearance of the film. In the formulation of paints and related products, solvents are chosen based on the evaporation characteristics appropriate to the application technique and the curing temperature.1.1 These test methods cover the determination of the rate of evaporation of volatile liquids of low viscosity using the Shell thin-film evaporometer. These test methods have been applied to a wide range of volatile liquids, including paint, varnish, and lacquer solvents and thinners to various hydrocarbons and to insecticide spray-base oils.

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5.1 The application of HFTs and temperature sensors to building envelopes provide in-situ data for evaluating the thermal performance of an opaque building component under actual environmental conditions, as described in Practices C1046 and C1155. These applications require calibration of the HFTs at levels of heat flux and temperature consistent with end-use conditions.5.2 This practice provides calibration procedures for the determination of the heat flux transducer sensitivity, S, that relates the HFT voltage output, E, to a known input value of heat flux, q.5.2.1 The applied heat flux, q, shall be obtained from steady-state tests conducted in accordance with either Test Method C177, C518, C1114, C1363, or, for cryogenic applications, Guide C1774.5.2.2 The resulting voltage output, E, of the heat flux transducer is measured directly using (auxiliary) readout instrumentation connected to the electrical output leads of the sensor.NOTE 1: A heat flux transducer (see also Terminology C168) is a thin stable substrate having a low mass in which a temperature difference across the thickness of the device is measured with thermocouples connected electrically in series (that is, a thermopile). Commercial HFTs typically have a central sensing region, a surrounding guard, and an integral temperature sensor that are contained in a thin durable enclosure. Practice C1046, Appendix X2 includes detailed descriptions of the internal constructions of two types of HFTs.5.3 The HFT sensitivity depends on several factors including, but not limited to, size, thickness, construction, temperature, applied heat flux, and application conditions including adjacent material characteristics and environmental effects.5.4 The subsequent conversion of the HFT voltage output to heat flux under application conditions requires (1) a standardized technique for determining the HFT sensitivity for the application of interest; and, (2) a comprehensive understanding of the factors affecting its output as described in Practice C1046.5.5 The installation of a HFT potentially changes the local thermal resistance of the test artifact and the resulting heat flow differs from that for the undisturbed building component. The following techniques have been used to compensate for this effect.5.5.1 Ensure that the installation is adequately guarded (3). In some cases, an assumption is made that the change in thermal resistance is negligible, particularly for very thin HFTs with a large surrounding guard, or is incalculable (1).5.5.2 For the embedded configuration, analytical and numerical methods have been used to account for the disturbance of the heat flux due to the presence of the HFT. Such analyses are outside the scope of this practice but details are available in Refs (4-8).5.5.3 For the surface-mounted configuration, measurement errors have been quantified by Trethowen (9). Empirical calibrations have also been determined by conducting a series of field calibrations or measurements. Such procedures are outside the scope of this practice but details are available in Orlandi et al. (10) and Desjarlais and Tye (11).5.6 Cryogenic and high temperature calibrations shall consider the effect of parasitic heat transfer due to large environmental temperature differences in performing thermal balances. The calibration and testing of heat flux transducers at cryogenic temperatures using the flat plate boiloff absolute calorimeter described in Guide C1774 and an unguarded flat plate method are described by Johnson et al. (12).1.1 This practice, in conjunction with either Test Method C177, C518, C1114, or C1363, establishes procedures for the calibration of heat flux transducers that are dimensionally thin in comparison to their planar dimensions.1.1.1 The thickness of the heat flux transducer shall be less than 30 % of the narrowest planar dimension of the heat flux transducer.1.2 This practice describes techniques for determining the sensitivity, S, of a heat flux transducer when subjected to one dimensional heat flow normal to the planar surface or when installed in a building application.1.3 This practice shall be used in conjunction with Practice C1046 and Practice C1155 when performing in-situ measurements of heat flux on opaque building components. This practice is comparable, but not identical, to the calibration techniques described in ISO 9869-1.1.4 This practice is not intended to determine the sensitivity of heat flux transducers used as components of heat flow meter apparatus, as in Test Method C518, or used for in-situ industrial applications, as covered in Practice C1041.1.5 This practice does not preclude the laboratory calibration of heat flux transducers for large-scale insulation systems operated at temperatures lower or higher than that for building components. For these applications, the heat flux transducers shall be calibrated at the temperatures that the transducer will be used.1.5.1 For cryogenic applications, the test apparatuses described in Guide C1774 are acceptable methods for calibration.1.6 The text of this standard references notes and footnotes which provide explanatory material. These notes and footnotes (excluding those in tables and figures) shall not be considered as requirements of the standard.1.7 Units—The values stated in SI units are to be regarded as standard. The values given in parentheses are provided for information only and are not considered standard.1.8 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.1.9 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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This specification deals with carbon and alloy steel forgings (including gas bottles) for use in thin-walled pressure vessels. Covered here are the following grades of steel forgings: Grade A; Grade B; Grade C; Grade D; Grade E, Classes 55, 65, and 70; Grade F, Classes 55, 65, and 70; Grade G, Classes 55, 65, and 70; Grade H, Classes 55, 65, and 70; Grade J, Classes 55, 65, and 70; Grade K; Grade L; Grade J, Class 110; and Grade M, Classes 85 and 100. Materials shall be manufactured by melting procedures, and optionally heat treated by normalization, normalization and tempering, or liquid-quenching and tempering. Heat and product analyses shall be performed wherein steel specimens shall conform to required chemical compositions of carbon, manganese, phosphorus, sulfur, silicon, nickel, chromium, molybdenum, and vanadium. Steel materials shall also undergo bending, flattening and hardness tests and shall conform to required values of tensile strength, yield strength, elongation, and hardness. Forgings shall be subjected to magnetic particle examination as well.1.1 This specification2 covers relatively thin-walled forgings (including gas bottles) for pressure vessel use. Three types of carbon steel and six types of alloy steel are included. Provision is made for integrally forging the ends of vessel bodies made from seamless pipe or tubing.NOTE 1: When working to the chemical and tensile requirements of this specification, the influence of wall thickness and cooling rate will necessarily eliminate certain forging sizes in each class.NOTE 2: Designations have been changed as follows:Current FormerlyGrade A Type IGrade B Type IIGrade C Type IIIGrade D Type IVGrade E Class 55 Type V Grade 1 Class 55Grade E Class 65 Type V Grade 1 Class 65Grade E Class 70 Type V Grade 1 Class 70Grade F Class 55 Type V Grade 2 Class 55Grade F Class 65 Type V Grade 2 Class 65Grade F Class 70 Type V Grade 2 Class 70Grade G Class 55 Type V Grade 3 Class 55Grade G Class 65 Type V Grade 3 Class 65Grade G Class 70 Type V Grade 3 Class 70Grade H Class 55 Type V Grade 4 Class 55Grade H Class 65 Type V Grade 4 Class 65Grade H Class 70 Type V Grade 4 Class 70Grade J Class 55 Type V Grade 5 Class 55Grade J Class 65 Type V Grade 5 Class 65Grade J Class 70 Type V Grade 5 Class 70Grade K Type VIGrade L Type VIIGrade J Class 110 Type VIIIGrade M Class 85 Type IX Class AGrade M Class 100 Type IX Class B1.2 The values stated in either SI units or inch-pound units are to be regarded separately as standard. The values stated in each system are not necessarily exact equivalents; therefore, to ensure conformance with the standard, each system shall be used independently of the other, and values from the two systems shall not be combined.1.3 Unless the order specifies the applicable “M” specification designation (SI units), the material shall be furnished to inch-pound units.1.4 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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This specification covers high purity titanium sputtering targets for use as raw material in the fabrication of semiconductor electronic thin films. Material covered by this specification comprises Grades 4N, 4N5, and 5N titanium sputtering targets, the grades of which are based on the total metallic impurity content. The target shall be manufactured free of any contaminates such as dirt or oils and with average and maximum grain sizes in conformity with the requirements specified. The target shall be analyzed for trace metallic impurities, carbon, oxygen, sulfur, nitrogen, and hydrogen and shall conform to the grade requirements and the acceptable and minimum detection limits specified.1.1 This specification covers pure titanium sputtering targets used as a raw material in fabricating semiconductor electronic devices.1.2 This standard sets purity grade levels, physical attributes, analytical methods, and packaging.1.2.1 The grade designation is a measure of total metallic impurity content. The grade designation does not necessarily indicate suitability for a particular application because factors other than total metallic impurity may influence performance.

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5.1 Thin-plate weirs are reliable and simple devices that have the potential for highly accurate flow measurements. With proper selection of the shape of the overflow section a wide range of discharges can be covered; the recommendations in this test method are based on experiments with flow rates from about 0.008 ft 3/s (0.00023 m  3/s) to about 50 ft 3/s (1.4 m 3/s).5.2 Thin-plate weirs are particularly suitable for use in water and wastewater without significant amounts of solids and in locations where a head loss is affordable.1.1 This test method covers measurement of the volumetric flow rate of water and wastewater in channels with thin-plate weirs. Information related to this test method can be found in Rantz (1)2 and Ackers (2).1.2 The values stated in inch-pound units are to be regarded as standard. The values given in parentheses are mathematical conversions to SI units that are provided for information only and are not considered standard.1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.1.4 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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