
【国外标准】 Rules for the preparation of detail specifications for semiconductor devices of assessed quality: low current rectifier diodes (up to 3 ampere rating)
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适用范围:
暂无
标准号:
BS 9330:1969
标准名称:
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: low current rectifier diodes (up to 3 ampere rating)
英文名称:
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: low current rectifier diodes (up to 3 ampere rating)标准状态:
被代替-
发布日期:
1969-09-30 -
实施日期:
出版语种:
- 其它标准
- 上一篇: BS 9329:1977 Rules for the preparation of detail specifications for semiconductor devices of assessed quality: varactor diodes for frequency multiplication
- 下一篇: BS 9331 N039 to 046:1974 Detail specification for medium current rectifier diodes. 3 A, 300 V, 600 V, 900 V, 1200 V, hermetically sealed. Full assessment level
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