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- BS QC 750112:1988 Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz

【国外标准】 Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz
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适用范围:
暂无
标准号:
BS QC 750112:1988
标准名称:
Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz
英文名称:
Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz标准状态:
被代替-
发布日期:
1988-12-15 -
实施日期:
出版语种:
- 其它标准
- 上一篇: BS QC 750111:1991 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Bidirectional triode thyristors (triacs), ambient or case-rated, up to 100 A
- 下一篇: BS QC 750113:1994 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: reverse blocking triode thyristors, ambient and case-rated, for currents greater than 100 A
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