This document describes the infrared reflectance method of thickness of silicon carbide epitaxial layers.
This document is applicable to the thickness test of silicon carbide homoepitaxial layers with dopant concentration of less than 1×10 16 cm -3, which grown on the n-type silicon carbide substrate with dopant concentration of more than 1×10 18 cm-3.The test range is 3 μm-200μm.
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