This document describes the infrared reflectance method of thickness of silicon carbide epitaxial layers.
This document is applicable to the thickness test of silicon carbide homoepitaxial layers with dopant concentration of less than 1×10 16 cm -3, which grown on the n-type silicon carbide substrate with dopant concentration of more than 1×10 18 cm-3.The test range is 3 μm-200μm.
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This standard specifies the requirements for wavelength from visible light to short wave infrared(VIS-SWIR)spectral reflectivity measurement of water,including the terms and definitions,measurement condition,measurement preparation,basic measurement,supported measurement,measurement record,measurement data processing and measurement summary.
This standard is applicable to obtain spectral reflectivity data of unfrozen ground surface and coastal water within the wavelength range from 380 nm to 2 500 nm.While the spectral reflectivity measurements within the near-ultraviolet range from 300 nm to 380 nm,and VIS-SWIR spectral reflectivity measurement of other unfrozen seawater can be performed by reference.
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